AUTO-ZERO CURRENT SENSING AMPLIFIER

摘要

A sensing amplifier (100) for a memory cell comprises a selection stage (102) that outputs one of a reference current (Iref) and a memory cell current (Icell) during a first period and the other of the reference current (Iref) and the memory cell current (Icell) during a second period. The first period and the second period are non-overlapping. An input stage (104) generates a first current based on the one of the reference current (Iref) and the memory cell current (Icell) during the first period and generates a second current based on the other of the reference current (iref) and the memory cell current (Icell) during the second period. A sensing stage (106) senses a first value based on the first current and stores the first value during the first period, senses a second value based on the second current during the second period and compares the first value to the second value.