| 摘要 |
A method for forming a semiconductor device is provided to prevent an SAC(Self Aligned Contact) fail between a landing plug and a gate by forming a nitride layer pattern of a bill shape in a side wall of a gate by forming the nitride layer on the whole surface. A gate(330) is formed on a semiconductor substrate(300). An insulating layer is reclaimed between the gates. The insulating layer is planarized and etched with a lower step than the gate. The nitride layer is formed on the whole surface including the gate. The nitride layer is etched back and a nitride layer pattern(420) of the bill shape is formed in the side wall of the gate of the upper part of the insulating layer. A gate spacer(400) is formed in the side wall of the gate.
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