METHOD OF MANUFACTURING NITRIDE COMPOUND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a nitride semiconductor device is provided to prevent damages to an epi layer and a support unit by selectively removing a heterogeneous substrate through a wet etch process. CONSTITUTION: A GaN epi layer(110) is formed on a first support substrate. A second support substrate(120) is formed on the GaN epi layer. A passivation layer is formed on the surface except the first support substrate. The first support substrate is etched by using the passivation layer as a mask. The passivation layer is removed and the second support substrate and the GaN epi layer are exposed. A single crystal GaN semiconductor layer(130) is formed on the first surface of the GaN epi layer.