| 摘要 |
PROBLEM TO BE SOLVED: To improve electrical characteristics of a semiconductor device which employs a split-gate type memory cell structure and includes a non-volatile memory using a nitride film as a charge storage layer. SOLUTION: After an n-type semiconductor region 6 is formed on the principal surface of a semiconductor substrate 1Sub, a memory gate electrode MG and the charge storage layer CSL of a split-gate type memory cell are formed thereon. After a sidewall 8 is subsequently formed on the side of the memory gate electrode MG, a photoresist pattern PR2 is formed on the principal surface of the semiconductor substrate 1Sub. Thereafter, a recess 13 is formed by removing, by etching, a portion of the principal surface of the semiconductor substrate 1Sub using the photoresist pattern PR2 as an etching mask. In the forming region of the recess 13, the n-type semiconductor region 6 is removed. Subsequently, a p-type semiconductor region to form a channel of nMIS for memory cell selection is formed onto the forming region of the recess 13. COPYRIGHT: (C)2011,JPO&INPIT
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