发明名称 DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a drive circuit for a semiconductor switching element capable of preventing the ON term of the semiconductor switching element from being increased when a pulse signal is stopped. <P>SOLUTION: A drive circuit alternately turns on a first semiconductor switching element Q1 and a second semiconductor switching element Q2 connected in series; the drive circuit includes a serial circuit of a capacitor C and a primary winding wire P of a transformer T1, connected to both terminals of a pulse signal generating circuit 2 for generating a pulse signal that becomes a control signal of the first and the second semiconductor switching elements; a first secondary winding wire S1 of the transformer, wound in reverse with respect to the primary winding wire for applying a generated voltage to a control terminal of the first semiconductor switching element; a second secondary winding wire S2 of the transformer, wound in the same direction as the primary winding wire for applying a generated voltage to a control terminal of the second semiconductor switching element; and a switching element Q3 which is turned on when the pulse signal is stopped, so as to shorten an ON term of the first semiconductor switching element. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010288194(A) 申请公布日期 2010.12.24
申请号 JP20090142229 申请日期 2009.06.15
申请人 SANKEN ELECTRIC CO LTD 发明人 NAKANISHI RYOTA
分类号 H03K17/08;H02M1/08;H03K17/687 主分类号 H03K17/08
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