| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, in which a bias applied to a field effect transistor (FET) device is controlled according to the temperature measured by a temperature sensor, capable of suppressing an increase of a chip size caused by the existence of a monitor region. <P>SOLUTION: In a semiconductor device 10, a plurality of gate fingers 14, a plurality of source fingers 16, and a plurality of drain fingers 18 are arranged in parallel on a first region of a semiconductor portion in a first direction. The distance between two adjacent gate fingers 14I provided in the middle of the gate fingers in the first direction is larger than the distance between the other gate fingers. The semiconductor device has a monitor region 26, and the monitor region is provided with a gate electrode, a source electrode, and a drain electrode for monitoring. The monitor region is a region within a second region adjacent to a first region 12a in a second direction 12b, and is adjacent to the region provided with the two gate fingers above. <P>COPYRIGHT: (C)2012,JPO&INPIT |
