METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: Methods for forming an oxide semiconductor film and for manufacturing a semiconductor device are provided to separate hydrogen from the oxide semiconductor film by performing heat treatment. CONSTITUTION: An oxide semiconductor film(103) is formed on a substrate(101). A hydrogen permeable film(105) is formed on the oxide semiconductor film. A hydrogen capture film(107) is formed on the hydrogen permeable film. The heat treatment is performed on the hydrogen permeable film and the hydrogen capture film. Hydrogen is moved from the oxide semiconductor film to the hydrogen capture film.