发明名称 CHARGE STEERING HIGH DENSITY ELECTRODE ARRAY
摘要 Technology for deep brain stimulating including devices, systems, computer circuitry, and associated methods is provided. A deep brain stimulating device (100) can include a semiconductor substrate, an array of electrodes (140) coupled to the semiconductor substrate, and circuitry operable to control the array of electrodes (140). Each electrode (142) can be operable to function as an anode, a cathode, a common, or a float independent of other electrodes in the array to create highly configurable electric fields (122, 124).
申请公布号 EP2849839(A4) 申请公布日期 2015.12.09
申请号 EP20130790100 申请日期 2013.05.16
申请人 UNIVERSITY OF UTAH RESEARCH FOUNDATION 发明人 DORVAL, ALAN, DALE, II;WILLSIE, ANDREW, COLIN
分类号 A61N1/18;A61N1/05;A61N1/36 主分类号 A61N1/18
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