| 发明名称 |
PLASMA PROCESSING METHOD |
| 摘要 |
In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched. |
| 申请公布号 |
US2015349245(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414447614 |
申请日期 |
2014.07.31 |
| 申请人 |
Hitachi High-Technologies Corporation |
发明人 |
Abe Takahiro;Yamamoto Naohiro;Suyama Makoto;Ishimaru Masato |
| 分类号 |
H01L43/12 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A plasma processing method for plasma-etching a magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, comprising the step of:
forming a deposit layer on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched. |
| 地址 |
Tokyo JP |
