发明名称 HIGHLY COMPACT NON-VOLATILE MEMORY AND METHOD THEREOF
摘要 A non-volatile memory device capable of reading and writing a large number of memory cells with multiple read/write circuits in parallel has an architecture that reduces redundancy in the multiple read/write circuits to a minimum. The multiple read/write circuits are organized into a bank of similar stacks of components. In one aspect, each stack of components has individual components factorizing out their common subcomponents that do not require parallel usage and sharing them as a common component serially. Other aspects, include serial bus communication between the different components, compact I/O enabled data latches associated with the multiple read/write circuits, and an architecture that allows reading and programming of a contiguous row of memory cells or a segment thereof. The various aspects combined to achieve high performance, high accuracy and high compactness.
申请公布号 US2015348617(A1) 申请公布日期 2015.12.03
申请号 US201514622565 申请日期 2015.02.13
申请人 Cernea Raul-Adrian 发明人 Cernea Raul-Adrian
分类号 G11C11/56 主分类号 G11C11/56
代理机构 代理人
主权项 1. A method of reading or writing an array of non-volatile memory cells, comprising: providing a set of read/write circuits; coupling said set of read/write circuits to a segment of a row of memory cells in the array in parallel, the memory cells in the segment of the row being adjacent to each other; and operating said set of read/write circuits to read or write on said contiguous segment of a row of memory cells in the array in parallel.
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