| 发明名称 | Power amplifier | ||
| 摘要 | A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit. | ||
| 申请公布号 | US9203357(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201213433410 | 申请日期 | 2012.03.29 |
| 申请人 | MITSUBISHI ELECTRIC CORPORATION | 发明人 | Miwa Shinichi;Tsukahara Yoshihiro;Kanaya Ko;Kosaka Naoki |
| 分类号 | H01L27/085;H01L23/66;H03F1/56;H01L27/02;H01L27/06;H03F3/195;H03F3/21;H03F3/24;H01L23/64;H01L21/8252 | 主分类号 | H01L27/085 |
| 代理机构 | Leydig, Voit & Mayer, Ltd. | 代理人 | Leydig, Voit & Mayer, Ltd. |
| 主权项 | 1. A power amplifier comprising: a semiconductor substrate comprising a plurality of transistor cells; a drain electrode of said plurality of transistor cells located on said semiconductor substrate; a drain pad located on said semiconductor substrate and connected to said drain electrode; a first ion-implanted resistance located in said semiconductor substrate and extending along and in contact with said drain pad; a first floating electrode located on said semiconductor substrate and in contact with said first ion-implanted resistance; an output matching circuit located outside said semiconductor substrate; and a wire connecting said drain pad to said output matching circuit. | ||
| 地址 | Tokyo JP | ||