Solar cell emitter region fabrication with differentiated p-type and n-type region architectures

摘要

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.

主权项

1. A back contact solar cell, comprising:
a substrate having a light-receiving surface and a back surface; a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate; a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed on the back surface of the substrate; a third thin dielectric layer disposed laterally directly between the first and second polycrystalline silicon emitter regions; a first conductive contact structure disposed on the first polycrystalline silicon emitter region; and a second conductive contact structure disposed on the second polycrystalline silicon emitter region, wherein the second polycrystalline silicon emitter region and the second thin dielectric layer are disposed in a recess disposed in the substrate and the first polycrystalline silicon emitter region overlaps the second polycrystalline silicon emitter region.