UNIFORMITY AND SELECTIVITY OF LOW GAS FLOW VELOCITY PROCESSES IN A CROSS FLOW EPITAXY CHAMBER WITH THE USE OF ALTERNATIVE HIGHLY REACTIVE PRECURSORS THOUGH AN ALTERNATIVE PATH

摘要

Methods for increasing layer uniformity in cross flow layer deposition are described herein. A method of depositing a layer can include delivering a deposition gas to a processing surface of a substrate using the deposition gas delivered through a first port in a first direction, depositing a layer on the processing surface of the substrate, the layer having one or more non-uniformities, and delivering a reactant gas to the layer through a second port in a second direction, the second direction being different from the first direction, the second direction and the first direction forming an azimuthal angle between them with respect to a central axis of the substrate support being up to about 145 degrees, the reactant gas reacting with the layer to diminish at least one of the one or more non-uniformities. The reactant gas can be delivered concurrent with or subsequent to the deposition gas.

主权项

1. A method for depositing a layer, sequentially comprising:
delivering a deposition gas comprising one or more constituent gases to a processing surface of a substrate, the substrate positioned on a substrate support in a process region of a process chamber, the deposition gas delivered through a first port in a first direction; depositing a layer on the processing surface of the substrate from the deposition gas, the layer having one or more non-uniformities; and delivering a reactant gas to the layer through a second port in a second direction, the second direction being different from the first direction, the second direction and the first direction forming an azimuthal angle between them with respect to a central axis of the substrate support being up to about 145 degrees, the reactant gas reacting with the layer to diminish at least one of the one or more non-uniformities, wherein the reactant gas does not form a deposition product with the deposition gas.