发明名称 |
APPARATUS, TECHNIQUES, AND TARGET DESIGNS FOR MEASURING SEMICONDUCTOR PARAMETERS |
摘要 |
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal. |
申请公布号 |
US2015323471(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201514708058 |
申请日期 |
2015.05.08 |
申请人 |
KLA-Tencor Corporation |
发明人 |
Sapiens Noam;Shchegrov Andrei V.;Pandev Stilian Ivanov |
分类号 |
G01N21/956;G01N21/95;G01N21/93;G01B11/00 |
主分类号 |
G01N21/956 |
代理机构 |
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代理人 |
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主权项 |
1. A method of determining a parameter of a target, comprising
proving a target having an imaging structure and a scatterometry structure; obtaining an image of the imaging structure with an imaging channel of a metrology tool; obtaining a scatterometry signal from the scatterometry structure with a scatterometry channel of the metrology tool; and determining at least one parameter of the target based on both the image and the scatterometry signal. |
地址 |
Milpitas CA US |