发明名称 APPARATUS, TECHNIQUES, AND TARGET DESIGNS FOR MEASURING SEMICONDUCTOR PARAMETERS
摘要 In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
申请公布号 US2015323471(A1) 申请公布日期 2015.11.12
申请号 US201514708058 申请日期 2015.05.08
申请人 KLA-Tencor Corporation 发明人 Sapiens Noam;Shchegrov Andrei V.;Pandev Stilian Ivanov
分类号 G01N21/956;G01N21/95;G01N21/93;G01B11/00 主分类号 G01N21/956
代理机构 代理人
主权项 1. A method of determining a parameter of a target, comprising proving a target having an imaging structure and a scatterometry structure; obtaining an image of the imaging structure with an imaging channel of a metrology tool; obtaining a scatterometry signal from the scatterometry structure with a scatterometry channel of the metrology tool; and determining at least one parameter of the target based on both the image and the scatterometry signal.
地址 Milpitas CA US