发明名称 |
Magnetoresistive element |
摘要 |
According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer. |
申请公布号 |
US9184374(B2) |
申请公布日期 |
2015.11.10 |
申请号 |
US201313963762 |
申请日期 |
2013.08.09 |
申请人 |
|
发明人 |
Sawada Kazuya;Nagase Toshihiko;Eeh Youngmin;Ueda Koji;Watanabe Daisuke;Nakayama Masahiko;Kai Tadashi;Yoda Hiroaki |
分类号 |
H01L29/82;H01L43/08;H01L43/10 |
主分类号 |
H01L29/82 |
代理机构 |
Holtz, Holtz, Goodman & Chick PC |
代理人 |
Holtz, Holtz, Goodman & Chick PC |
主权项 |
1. A magnetoresistive element comprising:
a first magnetic layer; a second magnetic layer; a third magnetic layer; a first nonmagnetic layer formed between the first magnetic layer and the second magnetic layer; and a second nonmagnetic layer formed between the second magnetic layer and the third magnetic layer, wherein: the third magnetic layer has a structure in which stack layers are stacked, the stack layers include a first stack layer close to the second magnetic layer, and a second stack layer which is farther from the second magnetic layer than the first magnetic layer is, each of the first stack layer and the second stack layer includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, a first ratio of a film thickness of the first layer to a film thickness of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to a film thickness of the second layer in the second stack layer, a saturation magnetization of the first stack layer is larger than a saturation magnetization of the second stack layer, and an anisotropic magnetic field of the second stack layer is larger than an anisotropic magnetic field of the first stack layer. |
地址 |
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