Morphology control of ultra-thin MeOx layer

摘要

A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

主权项

1. A device comprising:
a first layer operable as a first electrode; a second layer disposed over the first layer,
wherein the second layer comprises one of hafnium oxynitride, zirconium oxynitride, aluminum oxynitride, tantalum oxynitride, hafnium nitride, zirconium nitride, silicon nitride, aluminum nitride, titanium nitride, vanadium nitride, niobium nitride, or tungsten nitride,wherein the second layer directly interfaces the first layer,wherein a morphology of the first layer is the same as a morphology of at least a portion of the second layer directly interfacing the first layer, andwherein the morphology of the first layer is one of crystalline, polycrystalline, amorphous, or a combination thereof; and a third layer operable as a second electrode,
wherein the second layer is disposed between the first layer and the third layer.