发明名称 Microfluidic chip for susceptibility of superparamagnetic nanoparticles of bead and droplet types and measuring method for susceptibility using the same
摘要 The present invention relates to a microfluidic chip for measuring the magnetic susceptibility of a superparamagnetic nanoparticle droplet and a method for measuring magnetic susceptibility using the same. According to the invention, the magnetic susceptibility of a superparamagnetic nanoparticle can be continuously and accurately measured in a flowing fluid using a microfluidic chip including microfluidic channels.
申请公布号 US9176205(B2) 申请公布日期 2015.11.03
申请号 US201313865529 申请日期 2013.04.18
申请人 The Industry & Academic Cooperation in Chungnam National University (IAC) 发明人 Kim CheolGi;Jeong IlGyo;Eu Young-Jae;Kim KunWoo;Hu XingHao;Sinha Brajalal
分类号 G01R33/12;G01R33/07;G01N27/74 主分类号 G01R33/12
代理机构 Lucas & Mercanti, LLP 代理人 Lucas & Mercanti, LLP
主权项 1. A method for measuring the magnetic susceptibility of a superparamagnetic nanoparticle bead comprises the steps of: (1) injecting a continuous phase fluid and a magnetic fluid into a continuous phase fluid-moving microfluidic channel and a magnetic fluid-moving microfluidic channel, respectively, in a microfluidic chip; (2) allowing the continuous phase fluid and the magnetic fluid, injected in step (1), to meet each other to form a superparamagnetic nanoparticle bead droplet; and (3) measuring the magnetic susceptibility of a superparamagnetic nanoparticle bead present in the droplet when the superparamagnetic nanoparticle bead droplet formed in step (2) passes over an active junction area of a planar Hall resistive sensor, wherein the microfluidic chip comprises a planar Hall resistive sensor comprising an active junction area for sensing the superparamagnetic nanoparticle bead and droplet, which protrudes from an underlying substrate and in which a first arm having current electrodes at both ends and a second arm having voltage electrodes at both ends cross each other, wherein the first arm has a controlled length; and microfluidic channels crossing over the active junction area of the planar Hall resistive sensor.
地址 Daejeon KR