发明名称 Area efficient series MIM capacitor
摘要 Two series-connected metal-insulator-metal (MIM) capacitors are disclosed that are suitable for fabrication in the back-end structure of an integrated circuit. The MIM capacitors have first and second electrically conducting plates on a first insulating layer, third and fourth electrically conducting plates overlapping the first and second conducting plates, a second insulating layer between the first and third conducting plates and between the second and fourth conducting plates, a blind via coupling the first and fourth conducting plates, and connections to the second and third conducting plates. Methods of fabricating such series-connected MIM capacitors are also disclosed.
申请公布号 US9171897(B1) 申请公布日期 2015.10.27
申请号 US201313936245 申请日期 2013.07.08
申请人 Altera Corporation 发明人 Lim Queennie Suan Imm;Ibbotson Dale
分类号 H01L21/20;H01L21/02;H01L49/02 主分类号 H01L21/20
代理机构 Ward & Zinna, LLC 代理人 Ward & Zinna, LLC
主权项 1. A metal-insulator-metal (MIM) capacitor comprising: first and second conducting plates formed adjacent one another on a first insulating layer on a semiconductor substrate; third and fourth conducting plates formed adjacent one another above the first and second conducting plates, respectively, a first portion of the first conducting plate extending beyond the third conducting plate toward the second conducting plate and a first portion of the fourth conducting plate extending beyond the second conducting plate toward the third conducting plate so that there is some overlap of the first portions of the first and fourth conducting plates; a second insulating layer between the first and third conducting plates and between the second and fourth conducting plates; at least one blind via coupling the first portion of the first conducting plate to the first portion of the fourth conducting plate; and circuitry coupling the second and third conducting plates to other connections.
地址 San Jose CA US