发明名称 |
Radiation source, lithographic apparatus and device manufacturing method |
摘要 |
A radiation source generates extreme ultraviolet radiation for a lithographic apparatus as a chamber that is provided with a low pressure hydrogen environment. A trace amount of a protective compound, e.g., H2O, H2O2, O2, NH3 or NOx, is provided to the chamber to assist in maintaining a protective oxide film on metal, e.g., titanium, components in the chamber. |
申请公布号 |
US9164403(B2) |
申请公布日期 |
2015.10.20 |
申请号 |
US201013512128 |
申请日期 |
2010.12.08 |
申请人 |
ASML Netherlands B.V. |
发明人 |
Kempen Antonius Theodorus Wilhelmus;Bruls Richard Joseph;Loopstra Erik Roelof;Moors Johannes Hubertus Josephina;Swinkels Gerardus Hubertus Petrus Maria;Mestrom Wilbert Jan |
分类号 |
G03F7/20;B08B3/08 |
主分类号 |
G03F7/20 |
代理机构 |
Sterne, Kessler, Goldstein & Fox P.L.L.C |
代理人 |
Sterne, Kessler, Goldstein & Fox P.L.L.C |
主权项 |
1. A radiation source comprising:
a vacuum chamber enclosing a component comprising a non-inert material and enclosing a radiation generating element comprising a fuel; a gas supply arranged to supply hydrogen to the vacuum chamber; and a protecting device arranged to supply a trace amount of a protective compound to the vacuum chamber, wherein the radiation source is configured to supply a beam of extreme ultraviolet radiation to a lithographic apparatus, and wherein a temperature inside the vacuum chamber, a first partial pressure of the protective compound in the vacuum chamber, and a second partial pressure of hydrogen in the vacuum chamber are such that the protective compound preferentially bonds to the non-inert material rather than hydrogen and are such that the fuel remains in a non-oxidized state inside the vacuum chamber. |
地址 |
Veldhoven NL |