发明名称 IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE
摘要 An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.
申请公布号 US2015295007(A1) 申请公布日期 2015.10.15
申请号 US201414250192 申请日期 2014.04.10
申请人 OMNIVISION TECHNOLOGIES, INC. 发明人 Cellek Oray Orkun;Yang Dajiang;Hu Sing-Chung;Cizdziel Philip John;Tai Dyson;Chen Gang;Yang Cunyu;Lin Zhiqiang
分类号 H01L27/146;H01L31/167 主分类号 H01L27/146
代理机构 代理人
主权项 1. An image sensor pixel, comprising: a photosensitive element disposed in a semiconductor layer to receive electromagnetic radiation of a first type along a vertical axis; a floating diffusion region disposed in the semiconductor layer; a transfer gate disposed on the semiconductor layer between the photosensitive element and the floating diffusion region to control a flow of charge produced in the photosensitive element to the floating diffusion region; a dielectric charge trapping device disposed on the semiconductor layer to receive electromagnetic radiation of a second type along the vertical axis and to trap charges in response to the electromagnetic radiation of the second type, wherein the dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges; and a first metal contact coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.
地址 Santa Clara CA US