发明名称 Power converter package including vertically stacked driver IC
摘要 In one implementation, a semiconductor package includes a control conductive carrier having a die side and an opposite input/output (I/O) side connecting the semiconductor package to a mounting surface. The semiconductor package also includes a control FET of a power converter switching stage attached to the die side of the control conductive carrier, and a driver integrated circuit (IC) for driving the control FET. The driver IC is situated above the control FET and is electrically coupled to the control FET by at least one conductive buildup layer formed over the control conductive carrier.
申请公布号 US9159703(B2) 申请公布日期 2015.10.13
申请号 US201314023038 申请日期 2013.09.10
申请人 International Rectifier Corporation 发明人 Cho Eung San;Sawle Andrew N.;Pavier Mark;Cutler Daniel
分类号 H01L29/78;H01L25/065;H01L25/07;H01L25/11;H01L25/16;H01L23/495;H01L21/48;H01L23/31;H01L21/56;H01L23/00 主分类号 H01L29/78
代理机构 Farjami & Farjami LLP 代理人 Farjami & Farjami LLP
主权项 1. A semiconductor package comprising: a control conductive carrier having a die side and an opposite input/output (I/O) side connecting said semiconductor package to a mounting surface; a control FET of a power converter switching stage attached to said die side of said control conductive carrier; a driver integrated circuit (IC) for driving said control FET, said driver IC situated above said control FET and electrically coupled to said control FET by at least one conductive buildup layer formed over said control conductive carrier.
地址 El Segundo CA US