SEMICONDUCTING PIXEL, MATRIX OF SUCH PIXELS, SEMICONDUCTING STRUCTURE FOR THE PRODUCTION OF SUCH PIXELS AND THEIR METHODS OF FABRICATION

摘要

Pixel comprising three adjacent sub-pixels (P1, P2, P3), formed by respective stacks of semiconducting layers, said pixel being characterized in that: - each said sub-pixel comprises a first active layer (32), adapted to emit a light at a first wavelength (λ1) when it is traversed by an electric current; - another sub-pixel (P2) also comprises a second active layer (52, 52'), adapted to emit a light at a second wavelength (λ2) greater than said first wavelength; - another of said sub-pixels (P3) also comprises a third active layer (22, 6), adapted to emit a light at a third wavelength (λ3) greater than said first wavelength and different from said second wavelength; at least one out of said second and third active layer being adapted to emit said light when it is excited by the light of the first wavelength emitted by said first active layer of the same sub-pixel. Semi-conducting structure and methods for the fabrication of such a pixel.