TUNNEL INSULATION LAYER STRUCTURES, METHODS OF MANUFACTURING THE SAME, AND VERTICAL MEMORY DEVICES INCLUDING THE SAME

摘要

Disclosed are a tunnel insulating film structure, a method for manufacturing the tunnel insulating film structure and a vertical memory device including the tunnel insulating film structure. The tunnel insulating film structure includes a first tunnel insulating film, a second tunnel insulating film, a third tunnel insulating film, a fourth tunnel insulating film and a fifth tunnel insulating film. The first tunnel insulating film is arranged on a substrate, and has a first band gap energy. The second tunnel insulating film is arranged on the first tunnel insulating film, and has a second band gap energy smaller than the first band gap energy. The third tunnel insulating film is arranged on the second tunnel insulating film, and has a third band gap energy larger than the second band gap energy. The fourth tunnel insulating film is arranged on the third tunnel insulating film, and has a fourth band gap energy smaller than the third band gap energy. The fifth tunnel insulating film is arranged on the fourth tunnel insulating layer, and has a fifth band gap energy larger than the fourth band gap energy.