发明名称 |
Fin-type semiconductor device |
摘要 |
An apparatus comprises a substrate and a fin-type semiconductor device extending from the substrate. The fin-type semiconductor device comprises means for providing a first fin-type conduction channel having first and second regions, means for providing a second fin-type conduction channel having a fourth region above a third region, and means for shielding current leakage coupled to at least one of the first region and the third region. The first region has a first doping concentration greater than a second doping concentration of the second region. The first fin-type conduction channel comprises first ion implants implanted into the substrate at a first depth and second ion implants implanted into the substrate at a different depth. The third region has a third doping concentration, and the fourth region has a fourth doping concentration. |
申请公布号 |
US9153587(B2) |
申请公布日期 |
2015.10.06 |
申请号 |
US201514659893 |
申请日期 |
2015.03.17 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Li Xia;Yang Bin;Song Stanley Seungchul |
分类号 |
H01L21/336;H01L29/786;H01L27/092;H01L29/78;H01L29/06;H01L29/10;H01L21/8238;H01L21/265;G06F17/50 |
主分类号 |
H01L21/336 |
代理机构 |
Toler Law Group, PC |
代理人 |
Toler Law Group, PC |
主权项 |
1. A method comprising:
receiving design information comprising physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device comprising:
a substrate; anda fin-type semiconductor device extending from the substrate, the fin-type semiconductor device comprising:
a first fin comprising a first region having a first doping concentration and a second region having a second doping concentration, wherein the first fin comprises first ion implants implanted into the substrate at a first depth and second ion implants implanted into the substrate at a second depth different than the first depth, wherein the first doping concentration is greater than the second doping concentration;initiating formation of a second fin that extends from the substrate, wherein the second fin comprises a third region having a third doping concentration and a fourth region above the third region having a fourth doping concentration, wherein each of the first region and the third region comprises at least one of the first ion implants; andan oxide layer coupled to at least one of the first region and the third region; and transforming the design information to generate a data file. |
地址 |
San Diego CA US |