SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PROGRAM

摘要

The present invention is to suppress the sedimentation of a by-product in a substrate processing apparatus. The substrate processing apparatus of the present invention comprises: a processing gas supply unit for supplying processing gas; an inert gas supply unit for supplying inert gas; and a seal cap for sealing an opening unit of a processing container to be airtight. The inert gas supply unit comprises: a first supply pipe for supplying inert gas to a first jet unit in the center of the seal cap; a second supply pipe for supplying inert gas to a second jet unit in a position facing the internal wall of the end of the opening unit; a flux control unit installed on a third supply pipe connected to the first supply pipe and the second supply pipe; and a throttle unit installed on at least one side of the first supply pipe and the second supply pipe to throttle the flow path where gas flows. In the present invention, when processing gas is supplied into a processing container, the inert gas whose flux is controlled by the flux control unit is supplied from the third supply pipe to the first supply pipe and the second supply pipe. The inert gas of the first supply pipe is jetted from the first jet unit into the processing container, and the inert gas of the second supply pipe is jetted from the second jet unit to the internal wall.