METHOD OF CLEANING THE SEMICONDUCTOR WAFER FOR DEPRESSING A METAL CONTAMINATION

摘要

A method for cleaning a semiconductor wafer for depressing metal contamination is provided to prevent reduction of productivity due to the metal contamination by performing a final rinsing process using a mixed solution including a diluted hydrofluoric acid solution and a hydrogen peroxide solution. A supplying process is performed to supply a mixed solution(210) of a diluted hydrofluoric acid solution and a hydrogen peroxide solution in a bath(102). A first rinsing process is performed to load a semiconductor wafer(100) into the bath and to rinse the semiconductor wafer by using the mixed solution. A second rinsing process is performed to drain the mixed solution, to supply deionized water to the bath and to rinse the semiconductor wafer by using the deionized water. A drying process is performed to drain the deionized water, to supply isopropyl alcohol to the bath, and to dry the semiconductor wafer.