The method of fabricating poly crystaline silicon and the thin film transistor fabricating method of the same,申请号KR20000062211-传众专利搜索

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发明名称	The method of fabricating poly crystaline silicon and the thin film transistor fabricating method of the same
摘要
申请公布号	KR100659911(B1)	申请公布日期	2006.12.20
申请号	KR20000062211	申请日期	2000.10.23
申请人		发明人
分类号	H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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