| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a high-breakdown-voltage MOS transistor capable of having high current capability without increasing the area for a semiconductor device. SOLUTION: In, for example, a high-breakdown-voltage P-type MOS transistor structure, a low-density P-type diffusion region 109 is formed on a low-density N-type diffusion region 108 to the right and the left of a gate G, and a high-density P-type diffusion region 106 is formed thereupon. A high-density N-type diffusion region 104 is formed in the high-density P-type diffusion region 106, and the N-type diffusion region 104 is connected to a source or a drain region 113 or 114 above a contact 107 with the contact 107 interposed. The contact 107 is not formed in the high-density P-type diffusion region 106. The low-density N-type diffusion region 108, low-density and high-density N-type diffusion regions 109 and 106, and high-density N-type diffusion region 104 form parasitic bipolar transistors 203 and 204. COPYRIGHT: (C)2009,JPO&INPIT
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