PHASE CHANGE MEMORY DEVICE HAVING PLUG-SHAPED PHASE CHANGE LAYERS AND METHOD FOR MANUFACTURING THE SAME

摘要

A phase change memory device having plug-shaped phase change layers and a process of manufacturing the same is provided. The device and process includes forming first electrodes on a substrate. An insulation layer is then formed to cover the first electrodes. Plug-shaped phase change layers are then formed in the insulation layer to contact the first electrodes. The plug-shaped phase change layers have a straight-line or an 'L' shape when viewed as a cross-section and a horseshoe or a semicircle shape when viewed from above. Finally, bit lines are formed on the insulation layer to contact the phase change layers and additionally serve as second electrodes. The device may further include heaters interposed between the first electrodes and the plug-shaped phase change layers.