ESD protection for high voltage applications

摘要

An electrostatic discharge (ESD) protection device includes a diode located in a substrate and an N-type metal oxide semiconductor (NMOS) device located in the substrate adjacent the diode, wherein both the diode and the NMOS are coupled to an input device, and at least a portion of the diode and at least a portion of the NMOS device collectively form an ESD protection device.