| 摘要 |
An apparatus for forming a film for a semiconductor process is provided to prevent deterioration of a gas nozzle of a cleaning gas. An apparatus(1) for forming a film includes a reaction chamber(2) of a cylindrical shape having a ceiling. A plurality of wafers is loaded in a processing space(S) of the reaction chamber. An exhaust space is formed in one side of the reaction chamber. A partition(22) is arranged between the processing space and the exhaust space. A plurality of exhaust holes(3h) is formed according to a vertical direction of the partition. The processing space is connected to the exhaust space by the exhaust holes. A bottom part of a lowest exhaust hole is positioned on a position higher than a lowest level of a support level which supports the wafer of a wafer boat(6). A top part of a highest exhaust hole is positioned on a position lower than a highest level of the support level. A cover(5) is arranged on a bottom of the reaction chamber. The wafer boat has a plurality of support levels. A heater(7) is installed around the reaction chamber. A gas dispersion nozzle(8,9) and a gas nozzle(10) are connected to a processing gas supply part(GS) through a mass flow control.
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