| 摘要 |
Methods, devices and computer readable code for reading data from one or more flash memory cells, and for recovering from read errors are disclosed In some embodiments, in the event of an error correction failure by an error detection and correction module, the flash memory cells are re-read at least once using one or more modified reference voltages, for example, until a successful error correction may be earned out In some embodiments, after successful error correction a subsequent read request is handled without re- writing data (for example, reliable values of the read data) to the flash memory cells in the interim. In some embodiments, reference voltages associated with a reading where errors are corrected may be stored in memory, and retrieved when responding to a subsequent read request
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