| 摘要 |
A matrix microelectronic device comprising: - a plurality of cells laid out according to a matrix, respectively comprising at least one current source formed by at least one current source transistor (T1), - a source electrode of said transistor is connected to a source biasing conductor line, - a gate electrode of the transistor (T1) is connected to a gate biasing conductor line (1071, 1072) among a plurality of conductor gate biasing lines, wherein the device further comprises means for biasing the conductor gate biasing lines comprising: - at least one first connection line (108, 218), - means for generating current (210) or voltage (110-120), positioned on at least one end of said first connection line, and provided to generate an evolution of potentials along said first connection line. |
