发明名称 |
Method of fabricating semiconductor device, and developing apparatus using the method |
摘要 |
In a resist pattern forming method in which bake processing is performed at a temperature not lower than a glass transition temperature in order to obtain the desired sidewall angle, resist removable is difficult. Accordingly, in the resist pattern forming method of performing bake processing at a temperature not lower than a glass transition temperature, a process margin for resist removability cannot be ensured, so that there is the problem that it is impossible to compatibly realize both the formation of a resist pattern having the desired sidewall angle and the resist removability of the resist pattern. The invention aims to solve the problem. A resist pattern including a diazonaphthoquinone (DNQ)-novolac resin type of positive resist is formed, and the resist pattern is irradiated with light within the range of photosensitive wavelengths of a DNQ photosensitizer to perform bake processing on the resist pattern at a temperature not lower than the glass transition temperature of the resist pattern. |
申请公布号 |
US7799515(B2) |
申请公布日期 |
2010.09.21 |
申请号 |
US20080016244 |
申请日期 |
2008.01.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAGAI MASAHARU;UEHARA ICHIRO |
分类号 |
G03F7/26;G03F7/40;H01L21/027;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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