| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a sapphire single crystal, by which a high quality sapphire single crystal free from cracks is obtained. <P>SOLUTION: The method for producing a sapphire single crystal by a unidirectional solidification method includes using a crucible 20, composed of a material having a predetermined linear expansion coefficient preventing mutual stress caused by the difference between the linear expansion coefficient of the crucible 20 and the linear expansion coefficient of the sapphire single crystal to be produced in the direction perpendicular to a growth axis thereof, from occurring in the crucible 20 and the sapphire single crystal, or preventing deformation caused by the mutual stress in the crucible 20 without generating a crystal defect caused by the mutual stress in the sapphire single crystal. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
