| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality semiconductor element without any cost increase on the assumption that there are thickness variations in a semiconductor wafer. <P>SOLUTION: A manufacturing method of a semiconductor element comprises the steps of: preparing a semiconductor substrate having an embedded diffusion layer of a first conductivity type under an active layer of the first conductivity type; measuring a total thickness of the active layer and the embedded diffusion layer and calculating the thickness of the active layer from the measured total thickness; forming a collector region of the first conductivity type on the active layer by ion implantation in which case current flows between the collector region and the embedded diffusion layer; forming a base region of a second conductivity type on the active layer by ion implantation in which case current flows between the base region and the embedded diffusion layer; and forming an emitter region of the first conductivity type in the base region by ion implantation in which case current flows between the emitter region and the base region. The step of forming the base region changes ion acceleration energy according to the thickness of the active layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
