METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

To improve electric characteristics of a semiconductor device including an oxide semiconductor. Alternatively, to improve reliability of a semiconductor device including an oxide semiconductor. In a transistor including a first oxide film, an oxide semiconductor film, a pair of electrodes in contact with the oxide semiconductor film, and a second oxide film in contact with the oxide semiconductor film and the pair of electrodes, oxygen is added to the first oxide film and the second oxide film in contact with the oxide semiconductor film and the pair of electrodes, so that oxygen vacancies are reduced. The oxygen is diffused to the oxide semiconductor film by heat treatment or the like; thus, oxygen vacancies in the oxide semiconductor film are reduced.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
forming an oxide film over a substrate; adding oxygen to the oxide film; forming an oxide semiconductor film over the oxide film after adding oxygen to the oxide film; performing heat treatment; etching part of the oxide film and part of the oxide semiconductor film; forming a pair of electrodes over the oxide semiconductor film after etching the part of the oxide film and the part of the oxide semiconductor film; forming a gate insulating film over the oxide semiconductor film and the pair of electrodes; and forming a gate electrode over the gate insulating film.