发明名称 透明有機薄膜トランジスタ及びその製造方法
摘要 <p>A highly transparent organic thin-film transistor that has superior transistor performance and can be applied to flexible devices includes: a transparent support substrate; a first gate electrode formed on the transparent support substrate; a second gate electrode formed on the first gate electrode; a polymeric gate-insulating layer formed on the second gate electrode; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode.</p>
申请公布号 JP5787038(B2) 申请公布日期 2015.09.30
申请号 JP20140549228 申请日期 2013.12.25
申请人 富士電機株式会社 发明人 金井 直之
分类号 H01L29/786;H01L21/28;H01L29/423;H01L29/49;H01L51/05 主分类号 H01L29/786
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