| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve a low-threshold DWF-MOSFET.SOLUTION: A semiconductor device according to an embodiment comprises: a first gate insulation film 15 provided on a channel region 11; a second gate insulation film 16 having an electric film thickness smaller than that of the first gate insulation film 15a formed on the channel region 11 closer to a source region 14a than the first gate insulation film 15 and adjacent to the first gate insulation film 15; a first gate electrode 17 provided on the first gate insulation film 15, in which a part of the first gate electrode 17 is provided o the second gate insulation film 16; and a second gate electrode 18 having a work function higher than that of the first gate electrode 17. |
