METHOD FOR MANUFACTURING n-p-n NITRIDE-SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND n-p-n NITRIDE-SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

[Problem] To provide the following: a method, for manufacturing an N-P-N nitride-semiconductor light-emitting element that has a current-confinement region (A) using an embedded tunnel junction layer (302), that yields a good emission efficiency; and an N-P-N nitride-semiconductor light-emitting element. [Solution] A p-type GaN crystal layer (106) laminated to the bottom layer of a tunnel junction layer (302) is subjected to p-type activation in the middle of a manufacturing process, before said tunnel junction layer (302) is embedded in an n-type GaN crystal layer (109), with the tunnel junction layer (302) partially removed and the p-type GaN crystal layer (106) exposed to a surrounding gas. In the middle of the manufacturing process, with the p-type GaN crystal layer (106) exposed, said p-type GaN crystal layer (106) can be subjected to p-type activation efficiently, yielding a p-type GaN crystal layer that has low electrical resistance.