发明名称 |
Seal Ring Structure With A Metal Pad |
摘要 |
A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided. |
申请公布号 |
US2015249057(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201514715087 |
申请日期 |
2015.05.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Jeng-Shyan;Yaung Dun-Nian;Liu Jen-Cheng;Lee Hsin-Hui;Wang Wen-De;Tsai Shu-Ting |
分类号 |
H01L23/58;H01L21/31;H01L21/3205;H01L21/311;H01L23/00;H01L21/768;H01L23/528;H01L23/31;H01L23/522;H01L21/76;H01L21/306 |
主分类号 |
H01L23/58 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
forming a seal ring structure over a first side of a semiconductor substrate; forming a first passivation layer over the first side of the semiconductor substrate; forming a first metal pad over the first passivation layer on the first side of the semiconductor substrate, wherein the metal pad includes a recess; forming a second passivation layer directly on the metal pad and within the recess; and forming a second metal pad over a second side of the semiconductor substrate that is opposite the first side of the semiconductor substrate. |
地址 |
Hsin-Chu TW |