| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a current detector in which influence of positional variations between detection-target current lines and a magnetoelectric transducer is suppressed, and a semiconductor device including the same. <P>SOLUTION: Detection-target current lines 13 and 14 are formed by two parallel current lines having the same direction of a current i in the vicinity of a magnetoelectric transducer 1; and the same current i flows through the detection-target current lines 13 and 14. The magnetoelectric transducer 1 is arranged on an upper layer (on a side far from a substrate) through an insulating film with respect to the detection-target current lines 13 and 14. By appropriately setting the spacing between the two detection-target current lines 13 and 14, a magnetic field distribution in the vicinity of the magnetoelectric transducer 1 becomes gradual. Consequently, influence of positional variations between the detection-target current lines 13 and 14 and the magnetoelectric transducer 1 is reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
