| 摘要 |
<p>The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode is characterized by comprising: a first reflection layer formed in the opposite side of an active layer with respect to a first semiconductor layer for reflecting light generated in the active layer; and a second reflection layer formed in the opposite side of the active layer with respect to a second semiconductor layer for reflecting the light generated from the active layer. A lateral light-extraction enhancer, which changes a light path generated from the active layer, and is composed of a transparent material, is formed in the semiconductor light emitting diode.</p> |
