Non-volatile phase-change resistive memory

摘要

A method for implementing a system containing at least one memory device including a plurality of non-volatile memory cells each including a phase-change material configured to change state reversibly between at least an amorphous state and a crystalline state having different electrical resistances. The method includes steps of manufacturing the memory cells, including the formation of a layer of a phase-change material having an original amorphous state at the end of the steps of manufacturing the memory cells. The method for implementing the embedded system includes, after the steps of manufacturing the memory cells, at least the following steps: (i) pre-programming the memory device consisting of an electrical recrystallization of a selection of memory cells from their original amorphous state; and (ii) assembling the pre-programmed memory device in the system during which the device is subjected to a temperature of between 240° C. and 300° C.

主权项

1. A method for implementing a system comprising a memory device, the method comprising:
(i) manufacturing a plurality of non-volatile memory cells, each comprising a phase-change material configured to change state reversibly between at least an amorphous state and a crystalline state having different electrical resistances, wherein the manufacturing comprises forming a layer comprising the phase-change material having an original amorphous state at the end of the manufacturing; (ii) pre-programming a memory device comprising the plurality of non-volatile memory cells, by electrically recrystallizing a selection of the memory cells from their original amorphous state, to obtain a pre-programmed memory device; and (iii) assembling the pre-programmed memory device in the system during which the device is subjected to a temperature of between 240° C. and 300° C.