| 发明名称 |
MASK MANUFACTURING METHOD, MASK SUBSTRATE, AND CHARGED BEAM DRAWING METHOD |
| 摘要 |
A manufacturing method of a phase shift mask in an embodiment includes: forming a metal layer on a substrate, the metal layer having a first region and a second region, the first region being configured to emit secondary electrons by irradiation with electrons, the second region being configured to emit secondary electrons higher in density than the first region, by the irradiation with electrons; patterning the metal layer to form a main pattern in the first region and an alignment mark in the second region; forming a resist layer on the patterned metal layer; and aligning the substrate using a secondary electron image of the alignment mark. |
| 申请公布号 |
US2015241767(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414566585 |
申请日期 |
2014.12.10 |
| 申请人 |
NUFLARE TECHNOLOGY, INC. |
发明人 |
ANZE Hirohito |
| 分类号 |
G03F1/26;H01J37/30 |
主分类号 |
G03F1/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A mask manufacturing method comprising:
forming a metal layer on a substrate, the metal layer having a first region and a second region, the first region being configured to emit secondary electrons by irradiation with electrons, the second region being configured to emit secondary electrons higher in density than the first region, by the irradiation with electrons; patterning the metal layer to form a main pattern in the first region and an alignment mark in the second region; forming a resist layer on the patterned metal layer; and aligning the substrate using a secondary electron image of the alignment mark. |
| 地址 |
Yokohama JP |
