PLASMA PROCESSING APPARATUS AND METHOD FOR PROCESSING OBJECT

摘要

A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.

主权项

1. A plasma processing apparatus comprising:
a processing chamber including a sidewall; a mounting table including a lower electrode, the mounting table provided in the processing chamber such that a first space is defined between the mounting table and the sidewall; an upper electrode arranged to face the lower electrode in a first direction such that a second space is defined between the upper electrode and the lower electrode; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential, the grounding unit being configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.