发明名称 CHIP THERMAL DISSIPATION STRUCTURE
摘要 Disclosed is a chip thermal dissipation structure, employed in an electronic device comprising a first chip having a first chip face and a first chip back, comprising chip molding material, covering a lateral of the first chip; a first case, contacting the first chip back; a packaging substrate, connecting with the first chip face via first bumps; and a print circuit board, having a first surface and a second surface and connecting with the packaging substrate via solders. The chip thermal dissipation structure further comprises a second case, contacting the second surface. The thermal energy generated by the first chip is conducted toward the first case via the first chip back and toward the second case via the first chip face, the first bumps, the packaging substrate, the solders and the print circuit board.
申请公布号 US2015243577(A1) 申请公布日期 2015.08.27
申请号 US201514698406 申请日期 2015.04.28
申请人 Princo Middle East FZE 发明人 YANG Chih-kuang
分类号 H01L23/367;H01L23/00;H01L25/065;H01L23/31 主分类号 H01L23/367
代理机构 代理人
主权项 1. A chip thermal dissipation structure, employed in an electronic device, comprising: a first chip located inside the electronic device, having a first chip face and a first chip back; chip molding material, covering a lateral of the first chip; a first outer case of the electronic device separating an external environment outside the electronic device and an inner environment inside the electronic device, the first outer case encompassing an inner space of the electronic device, the first outer case contacting with the external environment at a first side thereof, and the first outer case at a second side opposite to the first side comprising a downward protrusion in position corresponding to the first chip back of the first chip to contact the first chip back; a packaging substrate, connecting with the first chip face of the first chip via a plurality of first bumps; and a print circuit board, having a first surface and a second surface and connecting with the packaging substrate at the first surface via a plurality of solders.
地址 DUBAl AE
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