Light emitting device

摘要

A light emitting device is disclosed. The light emitting device includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer interposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer. The second-conductive-type semiconductor layer includes an electron blocking region closely disposed to the active layer and having a pattern with a plurality of elements spaced apart from each other.

主权项

1. A light emitting device comprising:
a first-conductive-type semiconductor layer; a second-conductive-type semiconductor layer; and an active layer interposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the second-conductive-type semiconductor layer comprises an electron blocking layer including a plurality of first regions and a plurality of second regions, wherein the plurality of first regions and the plurality of second regions are disposed directly on the active layer through respective portions of said first and second regions that differ in composition from each other, and wherein each one of the plurality of first regions is spaced apart from any of the plurality of first regions adjacent to said one of the plurality of first regions by one of the plurality of second regions.