发明名称 RF power transistor circuits
摘要 A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
申请公布号 US9106187(B2) 申请公布日期 2015.08.11
申请号 US201414185291 申请日期 2014.02.20
申请人 Freescale Semiconductor, Inc. 发明人 Ladhani Hussain H.;Bouisse Gerard J.;Jones Jeffrey K.
分类号 H03F3/04;H03F1/32;H03F1/02;H03F1/56;H03F3/193;H03F3/26;H03F3/21 主分类号 H03F3/04
代理机构 代理人 Schumm Sherry W.
主权项 1. A radio frequency (RF) power transistor circuit comprising: a first power transistor having a control electrode for receiving a first RF input signal, and a first current electrode for providing a first RF output signal; and a first decoupling circuit, comprising: a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and a voltage reference, wherein the first inductive element and the first capacitor form a first inductor/capacitor circuit, wherein the first resistor is configured to dampen a resonance of the first inductor/capacitor circuit, and wherein the first decoupling circuit provides a low impedance termination to ground for distortion products that develop due to envelope frequencies.
地址 Austin TX US