发明名称 |
RF power transistor circuits |
摘要 |
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency. |
申请公布号 |
US9106187(B2) |
申请公布日期 |
2015.08.11 |
申请号 |
US201414185291 |
申请日期 |
2014.02.20 |
申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Ladhani Hussain H.;Bouisse Gerard J.;Jones Jeffrey K. |
分类号 |
H03F3/04;H03F1/32;H03F1/02;H03F1/56;H03F3/193;H03F3/26;H03F3/21 |
主分类号 |
H03F3/04 |
代理机构 |
|
代理人 |
Schumm Sherry W. |
主权项 |
1. A radio frequency (RF) power transistor circuit comprising:
a first power transistor having a control electrode for receiving a first RF input signal, and a first current electrode for providing a first RF output signal; and a first decoupling circuit, comprising:
a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and a voltage reference, wherein the first inductive element and the first capacitor form a first inductor/capacitor circuit, wherein the first resistor is configured to dampen a resonance of the first inductor/capacitor circuit, and wherein the first decoupling circuit provides a low impedance termination to ground for distortion products that develop due to envelope frequencies. |
地址 |
Austin TX US |