| 发明名称 |
Finfet structure and method to adjust threshold voltage in a finfet structure |
| 摘要 |
<p>FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.</p> |
| 申请公布号 |
GB2509262(B) |
申请公布日期 |
2015.08.05 |
| 申请号 |
GB20140004141 |
申请日期 |
2012.09.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDUARD A CARTIER;BRIAN J GREENE;DECHAO GUO;GAN WANG;YANFENG WANG;KEITH H WONG |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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